Effect of channel implantation on the design of high frequency nanoscale n-FinFETs

Author

Sengupta, M. ; Chattopadhyay, S. ; Maiti, C.K.

Author_Institution

Dept. of Electron. Sci., Univ. of Calcutta, Kolkata, India

fYear

2009

fDate

22-24 Dec. 2009

Firstpage

467

Lastpage

470

Abstract

In this paper, the effect of channel implantation dose and energy has been studied for the design of nanoscale FinFET devices for high frequency application. It was observed that the threshold voltage of the device may be increased through both implantation dose and energy but the later is preferable because of less carrier scattering. The drain current and the peak cut-off frequency of the device were found to increase either with the decrease in implantation dose or increase in implantation energy.

Keywords

MOSFET; ion implantation; nanotechnology; carrier scattering; channel implantation; drain current; high frequency nanoscale n-FinFET; implantation dose; implantation energy; nanoscale FinFET device; peak cut-off frequency; threshold voltage; Boron; Cutoff frequency; Doping profiles; FinFETs; Impurities; Nanoscale devices; Particle scattering; Semiconductor process modeling; Silicon on insulator technology; Spontaneous emission; Cut-off frequency; FinFET; Implantation; Process Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on

Conference_Location

Varanasi

Print_ISBN

978-1-4244-4846-3

Type

conf

DOI

10.1109/ELECTRO.2009.5441064

Filename

5441064