Title :
Effect of channel implantation on the design of high frequency nanoscale n-FinFETs
Author :
Sengupta, M. ; Chattopadhyay, S. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. Sci., Univ. of Calcutta, Kolkata, India
Abstract :
In this paper, the effect of channel implantation dose and energy has been studied for the design of nanoscale FinFET devices for high frequency application. It was observed that the threshold voltage of the device may be increased through both implantation dose and energy but the later is preferable because of less carrier scattering. The drain current and the peak cut-off frequency of the device were found to increase either with the decrease in implantation dose or increase in implantation energy.
Keywords :
MOSFET; ion implantation; nanotechnology; carrier scattering; channel implantation; drain current; high frequency nanoscale n-FinFET; implantation dose; implantation energy; nanoscale FinFET device; peak cut-off frequency; threshold voltage; Boron; Cutoff frequency; Doping profiles; FinFETs; Impurities; Nanoscale devices; Particle scattering; Semiconductor process modeling; Silicon on insulator technology; Spontaneous emission; Cut-off frequency; FinFET; Implantation; Process Simulation;
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
DOI :
10.1109/ELECTRO.2009.5441064
