DocumentCode :
1986285
Title :
Prediction of band offsets of the ternary alloy Si1-x-ySnxCy on Si
Author :
Sen, Gopa ; Mukhopadhyay, Bratati ; Basu, P.K.
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
fYear :
2009
fDate :
22-24 Dec. 2009
Firstpage :
471
Lastpage :
474
Abstract :
The band offsets and band gap for strained Si1-x-ySnxCy layers grown on Si substrate are estimated. The hydrostatic strain, the uniaxial strain and the intrinsic alloy effect are considered separately. The model is verified with the available bandgap energy of binary material.
Keywords :
band structure; internal stresses; photonic band gap; silicon; silicon compounds; tin compounds; Si; Si1-x-ySnxCy; band offsets; band structure; bandgap energy; binary material; hydrostatic strain; intrinsic alloy effect; strained layers; ternary alloy; uniaxial strain; Bandwidth; Capacitive sensors; Conducting materials; Germanium alloys; Lattices; Photonic band gap; Physics; Silicon alloys; Tin; Uniaxial strain; hydrostatic strain; ternary alloy; uniaxial and biaxial strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
Type :
conf
DOI :
10.1109/ELECTRO.2009.5441065
Filename :
5441065
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1986285
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