Synthesis and characterization of Gallium Nitride nanocrystals

A simple method to synthesize Gallium Nitride (GaN) powder using gallium trichloride (GaCl₃) and ethylene diamine tetra acetic acid (EDTA) as starting materials has been discussed in this article. GaN nanocrystals were synthesized by nitradation of Gallium-EDTA complex at different temperatures of 600??C, 700??C, 800??C and 900??C in ammonia (NH₃) atmosphere. X-ray diffraction analysis revealed the formation of single phase hexagonal GaN for the compound synthesized at temperature of 900??C. However the other low temperature synthesis resulted mixed phases of ??-Ga₂O₃, 2GaONO₃.N₂O₅ and GaN. Scanning electron microscopy images show that the particles were in the form of agglomerates. The average size of the particle was found to be ~20 nm by transmission electron microscopy. Energy Dispersive X-ray diffraction analysis shows variation in elemental composition of synthesized compound with respect to temperature. The room temperature photoluminescence exhibits band-edge emission of GaN at 3.46 eV.