Title :
Synthesis and characterization of well-aligned ZnO:Sb nanowires
Author :
Nakamura, D. ; Okazaki, K. ; Palani, I.A. ; Higashihata, M. ; Okada, T.
Author_Institution :
Dept. of Electr. Eng., Kyushu Univ., Fukuoka, Japan
fDate :
Aug. 28 2011-Sept. 1 2011
Abstract :
Vertically-aligned ZnO nanowires on a sapphire substrate have been synthesized by a nanoparticle-assisted pulsed-laser deposition using a Sb2O3 doped ZnO target. Uniform cone-shape core was formed at the bottom of each vertically-aligned ZnO nanowire. The nanowires consist of single-crystalline wurzite ZnO crystal with a growth direction along [0001]. The room-temperature photo luminescence spectrum exhibited a strong ultraviolet emission at around 380 nm.
Keywords :
II-VI semiconductors; antimony compounds; nanoparticles; nanowires; pulsed laser deposition; sapphire; zinc compounds; Al2O3; ZnO:Sb2O3; nanoparticle assisted pulsed laser deposition; photoluminescence spectrum; single crystalline wurzite crystal; temperature 293 K to 298 K; uniform cone shape core; vertically aligned nanowires; wavelength 380 nm; well aligned nanowires; Nanowires; Scanning electron microscopy; Substrates; Temperature; X-ray scattering; Zinc oxide;
Conference_Titel :
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4577-1939-4
DOI :
10.1109/IQEC-CLEO.2011.6193764
