Title :
Dimensional and Other New Effects in Advanced SOI Devices
Author :
Cristoloveanu, Sorin
Author_Institution :
Institut de Microelectronics, Electromagnetism and Photonics (UMR CNRS, INPG & UJF), ENSERG, B.P. 257, 38016 Grenoble Cedex 1, France. E-mail: sorin@enserg.fr
Abstract :
Institut de Microelectronics, Electromagnetism and Photonics (UMR CNRS, INPG & UJF), ENSERG, B.P. 257, 38016 Grenoble Cedex 1, France. E-mail: sorin@enserg.fr Abstract-The principles of SOI technology for ultimate scaling are reviewed. Several interesting mechanisms result from the reduction in the transistor volume or from the implementation of several gates. The discussion is based on recent measurements in advanced SOI MOSFETs.
Keywords :
CMOS technology; MOSFETs; Silicon carbide; Silicon on insulator technology; Temperature; Thermal conductivity; Transconductance; Transistors; Tunneling; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635209
