• DocumentCode
    1986386
  • Title

    Dimensional and Other New Effects in Advanced SOI Devices

  • Author

    Cristoloveanu, Sorin

  • Author_Institution
    Institut de Microelectronics, Electromagnetism and Photonics (UMR CNRS, INPG & UJF), ENSERG, B.P. 257, 38016 Grenoble Cedex 1, France. E-mail: sorin@enserg.fr
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    69
  • Lastpage
    73
  • Abstract
    Institut de Microelectronics, Electromagnetism and Photonics (UMR CNRS, INPG & UJF), ENSERG, B.P. 257, 38016 Grenoble Cedex 1, France. E-mail: sorin@enserg.fr Abstract-The principles of SOI technology for ultimate scaling are reviewed. Several interesting mechanisms result from the reduction in the transistor volume or from the implementation of several gates. The discussion is based on recent measurements in advanced SOI MOSFETs.
  • Keywords
    CMOS technology; MOSFETs; Silicon carbide; Silicon on insulator technology; Temperature; Thermal conductivity; Transconductance; Transistors; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635209
  • Filename
    1635209
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986386