مرکز منطقه ای اطلاع رساني علوم و فناوري - Ga1-xInxAs/lnAsyP1-ylnP Photodiodes for 1.6μm to 2.4μm Spectral Region Grown by Low Pressure MO-CVD

DocumentCode :

1986402

Title :

Ga_1-xIn_xAs/lnAs_yP_1-ylnP Photodiodes for 1.6μm to 2.4μm Spectral Region Grown by Low Pressure MO-CVD

Author :

di Forte-Poisson, M.A. ; Brylinski, C. ; Persio, J. Di ; Hugon, X. ; Vilotich, B. ; Thomson, C.L.

Author_Institution :

Universite Des Sciences et Technologies de Lille, France

fYear :

1992

fDate :

8-11 Jun 1992

Firstpage :

267

Lastpage :

268

Keywords :

Crystalline materials; Materials testing; Photodiodes; Superlattices; Time measurement;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN :

0-87942-652-7

Type :

conf

DOI :

10.1109/MOVPE.1992.665051

Filename :

665051

Link To Document :