Title :
Plasma chemical etching of silicon (optimization of process)
Author_Institution :
NSTU, Novosibirsk, Russia
fDate :
26 June-2 July 2005
Abstract :
The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The inconsistent model of plasma chemical etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer. The deep etching of silicon up to 180 mkm for 30 minutes is carried out. However anisotropy of deep etching of silicon is low.
Keywords :
micromechanical devices; polymer films; quartz; silicon; sputter etching; CCl2F2/O2; Si; chemically active particles; deep etching; process optimization; quartz reactor; silicon plasma chemical etching; teflon polymer; Anisotropic magnetoresistance; Chemical processes; Chemical technology; Etching; Microelectronics; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Silicon;
Conference_Titel :
Science and Technology, 2005. KORUS 2005. Proceedings. The 9th Russian-Korean International Symposium on
Print_ISBN :
0-7803-8943-3
DOI :
10.1109/KORUS.2005.1507660
