DocumentCode :
1986419
Title :
A 1 W, 20 dB Gain, 6-12 GHz FET Amplifier
Author :
Venet, C. ; Baudet, P. ; Villegas, M. Levent ; Roussel, M.
fYear :
1983
fDate :
3-8 Sept. 1983
Firstpage :
213
Lastpage :
218
Abstract :
This paper will describe a 1 W, 20 dB associated gain GaAs FET amplifier covering the 6-12 GHz band. The amplifier is made up of several broadband amplifier modules considered as building blocks and properly combined. This paper includes the design and fabrication of the broadband amplifier modules and the method used for determining the optimum load for high power operation.
Keywords :
Automatic testing; Broadband amplifiers; Circuit testing; FETs; Fabrication; Gain; High power amplifiers; Impedance; Power amplifiers; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1983. 13th European
Conference_Location :
Nurnberg, Germany
Type :
conf
DOI :
10.1109/EUMA.1983.333230
Filename :
4131892
Link To Document :
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