Title :
Si-based photodetectors in optical communication
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
Si-based photodetectors play key role in the performance of Si-photonic Devices. Design of high performance Si-detectors for optical communication system is a challenging task. Drawbacks arising from low absorption efficiency due to indirect nature of the band-gap in Si, strain in Ge/Si heterointerfaces, etc are to be overcome with suitable structure/design of the detectors. In this paper, a brief review is given on Si-detectors, such as Si-CMOS, SiGe and Ge-on-Si photodetectors including their fabrication techniques, performance trend with some aspects of modeling.
Keywords :
Ge-Si alloys; optical communication; photodetectors; silicon; Si; SiGe; absorption efficiency; heterointerfaces; optical communication; photodetectors; Absorption; Capacitive sensors; Detectors; Fabrication; Germanium silicon alloys; Optical design; Optical fiber communication; Photodetectors; Photonic band gap; Silicon germanium; Optical detector; Si-CMOS; Si-photodetector; SiGe;
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
DOI :
10.1109/ELECTRO.2009.5441072