Title :
Circuit Design and FM Noise Characteristics of 20/30 GHz GaAs MESFET Multiplier Chains
Author :
Shima, T. ; Takano, T. ; Katoh, T. ; Sugawara, H. ; Komizo, H.
Author_Institution :
Fujitsu Laboratories Ltd., 1015 Kamikodanaka, Nakahara, Kawasaki, Japan
Abstract :
Multiplier chains for 20/30 GHz bands were developed using two-stage GaAs MESFET doublers. They provide 11 dBm output power with 4 dB gain at 18 GHz and 4 dBm output power with 5 dB loss at 30 GHz. Circuit design and FM noise characteristics will also be described.
Keywords :
Circuit noise; Circuit synthesis; FETs; Gallium arsenide; Impedance; MESFET circuits; Oscillators; Power generation; Power harmonic filters; Radio frequency;
Conference_Titel :
Microwave Conference, 1983. 13th European
Conference_Location :
Nurnberg, Germany
DOI :
10.1109/EUMA.1983.333236
