DocumentCode :
1986524
Title :
Circuit Design and FM Noise Characteristics of 20/30 GHz GaAs MESFET Multiplier Chains
Author :
Shima, T. ; Takano, T. ; Katoh, T. ; Sugawara, H. ; Komizo, H.
Author_Institution :
Fujitsu Laboratories Ltd., 1015 Kamikodanaka, Nakahara, Kawasaki, Japan
fYear :
1983
fDate :
3-8 Sept. 1983
Firstpage :
252
Lastpage :
257
Abstract :
Multiplier chains for 20/30 GHz bands were developed using two-stage GaAs MESFET doublers. They provide 11 dBm output power with 4 dB gain at 18 GHz and 4 dBm output power with 5 dB loss at 30 GHz. Circuit design and FM noise characteristics will also be described.
Keywords :
Circuit noise; Circuit synthesis; FETs; Gallium arsenide; Impedance; MESFET circuits; Oscillators; Power generation; Power harmonic filters; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1983. 13th European
Conference_Location :
Nurnberg, Germany
Type :
conf
DOI :
10.1109/EUMA.1983.333236
Filename :
4131898
Link To Document :
بازگشت