Title :
Metal Gate/High-K Dielectric Stack on Si Cap/Ultra-Thin Pure Ge epi/Si Substrate
Author :
Yeo, Chia Ching ; Lee, M.H. ; Liu, C.W. ; Choi, K.J. ; Lee, T.W. ; Cho, B.J.
Author_Institution :
Silicon Nano Device Lab, Department of Electrical and Computer Engineering of the National University of Singapore, Singapore, 117576
Abstract :
Metal gate/High-K stack CMOSFETs on ultra thin Ge epi channel on relaxed Si, capped with ultra thin Si (Si/Ge/Si substrate) were evaluated. NMOSFET shows enhanced mobility at low field while pMOSFET shows degraded peak mobility, with enhancement observed only at high field.
Keywords :
Annealing; CMOSFETs; Dielectric substrates; Electron mobility; FETs; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Silicon germanium;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635217
