Title :
Performance and reliability evaluations of p-channel flash memories with different programming schemes
Author :
Chung, S.S. ; Kuo, S.N. ; Yih, C.M. ; Chao, T.S.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, a complete study of the cell reliability based on a unique oxide damage characterization for two different programming schemes of p-channel flash cell are presented. These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both N/sub it/ and Q/sub ox/ will dominate the device degradation during programming. Although p-flash cell has high speed performance compared with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.
Keywords :
EPROM; PLD programming; circuit optimisation; hot carriers; integrated circuit reliability; tunnelling; P/E cycles; band-to-band tunneling induced hot electron injection; cell reliability; channel hot electron injection; device degradation; device optimization; drain engineering; high speed performance; oxide damage characterization; p-channel flash memories; programming schemes; reliability evaluation; Channel hot electron injection; Degradation; Dielectric measurements; Flash memory; Flash memory cells; MOSFET circuits; Reliability engineering; Stress; Threshold voltage; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650385
