Title :
Large optical nonlinearities near the bandgap of MOCVD-grown GaN thin films
Author :
Schmidt, T.J. ; Song, J.J. ; Chang, Y.C. ; Horning, R. ; Goldenberg, B.
Author_Institution :
Center for Laser & Photonics Res., Oklahoma State Univ., Stillwater, OK, USA
Abstract :
Summary form only given.To study the effects of high densities of excess free carriers on the optical transitions near the band edge of wurtzite GaN, nondegenerate nanosecond optical pump-probe transmission and reflection experiments have been performed on GaN thin films grown by metallo-organic chemical-vapor deposition (MOCVD) on (0001)-oriented sapphire. The large magnitude of the optical nonlinearities observed in our work suggests the possibility of new optoelectronic applications.
Keywords :
III-V semiconductors; MOCVD; carrier density; gallium compounds; high-speed optical techniques; nonlinear optics; optical films; optical pumping; (0001)-oriented sapphire; GaN; GaN thin films; MOCVD; MOCVD-grown GaN thin film bandgap; band edge; excess free carriers; high densities; large optical nonlinearities; metallo-organic chemical-vapor deposition; nondegenerate nanosecond optical pump-probe transmission; optical nonlinearities magnitude; optical transitions; optoelectronic applications; reflection experiments; Delta modulation; Gallium nitride; Laser beams; Nonlinear optics; Optical films; Optical filters; Optical refraction; Optical scattering; Particle scattering; Photonic band gap;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680499
