Title :
Low Noise Design of Dielectric Resonator FET Oscillators
Author :
Camiade, M. ; Bert, A. ; Graffeuil, J. ; Pataut, G.
Author_Institution :
THOMSON-CSF/DCM - Laboratoire Microélectronique Hyperfréquence 29, Avenue Carnot - 91300 MASSY FRANCE
Abstract :
Experimental comparison has been made between different ORO circuits with FET´s of various origins and size around 11 GHz. Details of the most pertinent conclusions are given together with theoretical explanations of the observed results. A ¿105 dBc/Hz figure has been achieved at 10 KHz off carrier.
Keywords :
1f noise; Circuit noise; Dielectrics; FETs; Frequency; Gunn devices; Low-frequency noise; Oscillators; Semiconductor device noise; Voltage;
Conference_Titel :
Microwave Conference, 1983. 13th European
Conference_Location :
Nurnberg, Germany
DOI :
10.1109/EUMA.1983.333243
