DocumentCode :
1986736
Title :
Microwave FET Oscillator Design Based on Large-Signal Characterisation
Author :
Snowden, Christopher M. ; Howes, Michael J. ; Morgan, D Vernon
Author_Institution :
The Department of Electrical and Electronic Engineering, The University of Leeds, Leeds. LS2 9JT. England.
fYear :
1983
fDate :
3-8 Sept. 1983
Firstpage :
325
Lastpage :
329
Abstract :
A method of accurately designing microwave FET oscillators using a two terminal large-signal characterisation technique is described. Measurements are used to characterise a one-port microwave oscillator circuit in terms of admittance, frequency and signal level, with the FET embedded in a feedback network. Device surfaces are used in the optimal design of low noise FET oscillators. The technique is applied to several microstrip MESFET oscillator circuits.
Keywords :
Admittance measurement; Design methodology; Feedback circuits; Frequency measurement; Microwave FETs; Microwave circuits; Microwave devices; Microwave measurements; Microwave oscillators; Microwave theory and techniques;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1983. 13th European
Conference_Location :
Nurnberg, Germany
Type :
conf
DOI :
10.1109/EUMA.1983.333248
Filename :
4131910
Link To Document :
بازگشت