Title :
Nondestructive Depth Profiling of Gate Insulators by Angle-Resolved Photoelectron Spectroscopy
Author :
Nohira, H. ; Shinagawa, S. ; Kase, M. ; Maruizumi, T. ; Hattori, T.
Author_Institution :
Department of Electrical & Electronic Engineering, Musashi Institute of Technology, Setagaya, Toky, 158-8557, Japan
Abstract :
Our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The depth profiles of composition and chemical bonding configuration of nitrogen atoms were determined by applying maximum entropy concept to the angle-resolved photoelectron spectroscopy.
Keywords :
Bonding; Chemicals; Entropy; Insulation; Nearest neighbor searches; Nitrogen; Silicon; Spectroscopy; X-ray detection; X-ray detectors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635230
