A new method for the design of ultra low noise oscillators

Author

Vaury, E. ; Giordano, V. ; Nallatamby, J.C. ; Groslambert, J. ; Camiade, M. ; Prigent, M. ; Llopis, O. ; Gonzalez, E. ; Chaubet, M. ; Obregon, J.

Author_Institution

IRCOM, Brive, France

Volume

2

fYear

1999

fDate

1999

Firstpage

557

Abstract

We describe a newly developed design method of free running oscillator circuits leading to the minimum phase noise, for given transistor and resonator. This method has allowed us to design a 9.2 GHz oscillator using a PHEMT transistor and a sapphire resonator stabilized at 330 K, presenting a measured phase noise of -80 dBc/Hz at 100 Hz offset from carrier with an 1/f³ slope. This result represents the state of the art of HEMT free running oscillators at room temperature

Keywords

HEMT circuits; dielectric resonator oscillators; microwave circuits; microwave oscillators; phase noise; sapphire; 330 K; 9.2 GHz; PHEMT transistor; free running oscillator circuits; microwave oscillators; phase noise; sapphire resonator; ultra low noise oscillators; Circuits; Design methodology; Diodes; Equations; Frequency; Microwave oscillators; PHEMTs; Phase noise; Power amplifiers; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency and Time Forum, 1999 and the IEEE International Frequency Control Symposium, 1999., Proceedings of the 1999 Joint Meeting of the European

Conference_Location

Besancon

ISSN

1075-6787

Print_ISBN

0-7803-5400-1

Type

conf

DOI

10.1109/FREQ.1999.841366

Filename

841366