Title :
Low noise FET design for wireless communications
Author :
Franca-Neto, L.M. ; Mao, E. ; Harris, J.S., Jr.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
This work explains a new and unified microscopic treatment for noise in semiconductor devices which is well suited for the design of low noise FETs for wireless communications applications. A computational procedure for the calculation of device noise performance is described and simulated results are compared with published results for Submicron CMOS transistors.
Keywords :
Boltzmann equation; field effect transistors; semiconductor device models; semiconductor device noise; device noise performance; low noise FET design; microscopic treatment; semiconductor device noise; simulated results; wireless communications; Acoustic noise; Circuit noise; FET circuits; Gallium arsenide; Microscopy; Noise figure; Semiconductor device noise; Semiconductor devices; Silicon; Wireless communication;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650387
