Title :
A Single-bias 2W PHEMT MMIC by Gate Zero-Bias Technique for C Band Applications
Author :
Lin, C.H. ; Liu, H.Z. ; Huang, H.K. ; Chu, C.K. ; Houng, M.P. ; Wang, Y.H. ; Liu, C.C. ; Chang, C. Hwa ; Wu, C.L. ; Chang, C.H.
Author_Institution :
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, 701 Taiwan
Abstract :
A single supply, fully matched high linearity 2W power amplifier utilizing the gate zero-bias power PHEMT technology is developed for 5.8GHz WLAN applications. At Vgs= 0 V, Vds= 5 V, the power amplifier with 33dBm of peak P1dB, 25% of PAE, 12.8dB small-signal gain can be seen. Moreover, high-linearity with 43dBm third-order intercept point at a single carrier output power level of 23dBm is also achieved.
Keywords :
High power amplifiers; Linearity; MMICs; OFDM; PHEMTs; Power amplifiers; Power generation; Resistors; Voltage; Wireless LAN;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635238
