• DocumentCode
    1986960
  • Title

    A Single-bias 2W PHEMT MMIC by Gate Zero-Bias Technique for C Band Applications

  • Author

    Lin, C.H. ; Liu, H.Z. ; Huang, H.K. ; Chu, C.K. ; Houng, M.P. ; Wang, Y.H. ; Liu, C.C. ; Chang, C. Hwa ; Wu, C.L. ; Chang, C.H.

  • Author_Institution
    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, 701 Taiwan
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    191
  • Lastpage
    194
  • Abstract
    A single supply, fully matched high linearity 2W power amplifier utilizing the gate zero-bias power PHEMT technology is developed for 5.8GHz WLAN applications. At Vgs= 0 V, Vds= 5 V, the power amplifier with 33dBm of peak P1dB, 25% of PAE, 12.8dB small-signal gain can be seen. Moreover, high-linearity with 43dBm third-order intercept point at a single carrier output power level of 23dBm is also achieved.
  • Keywords
    High power amplifiers; Linearity; MMICs; OFDM; PHEMTs; Power amplifiers; Power generation; Resistors; Voltage; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635238
  • Filename
    1635238
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986960