Title :
An InGaP/GaAs HBT MMIC Power Amplifier with an Integrated Diode Linearizer
Author :
Zhu, M. ; Yang, H. ; Zhang, H.Y. ; Liu, X.C.
Author_Institution :
Key Lab of Compound Semiconductor Device and Circuit, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029
Abstract :
An InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifie (PA) using an improved linearization technique is studied in this paper. This improved linearization technique provides high efficiency at different amplification ofthe modulation as well as high operation voltage. Also the gain compression and the phase distortion of the HBT are effectively improved with no additional DC consumption. The fabricated HBT MMIC PA exhibits an output power of 24 dBm and a power-added efficiency as high as 37% at an operation voltage of6.5 V.
Keywords :
Bipolar integrated circuits; Diodes; Gallium arsenide; Heterojunction bipolar transistors; Linearization techniques; MMICs; Microwave integrated circuits; Microwave theory and techniques; Power amplifiers; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635239
