A Gate Zero-Bias 2W PHEMT Power Amplifier Operating at 3.5 GHz

Author

Chu, C.K. ; Huang, H.K. ; Liu, H.Z. ; Lin, C.H. ; Houng, M.P. ; Wang, Y.H. ; Chang, C.H. ; Wu, C.L. ; Chang, S.

Author_Institution

Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, 701 Taiwan

fYear

2005

fDate

19-21 Dec. 2005

Firstpage

211

Lastpage

214

Abstract

A single supply 2W MMIC power amplifier, operating between 3.3GHz and 3.8GHz by implementing AlGaAs/InGaAs/GaAs PHEMT for the applications of WiMax, is demonstrated. Using the gate zero-bias configuration, i.e., VGS=0 and IDSS, one can use only one single bias instead of dual bias in the depletion mode PHEMTs. This two-stage amplifier is designed by using a zero gate bias configuration i.e., VGS=0 and at saturated drain current IDSS, for class A power amplifier operation. The two-stage MMIC amplifier possesses the characteristics of 25.9dB small-signal gain and 34.0dBm 1-dB gain compression power. Moreover, with a single carrier output power level of 2ldBm, very high linearity with a 47dBm third-order intercept point operating at 3.5GHz is also achieved.

Keywords

Decision support systems; Gallium arsenide; Indium gallium arsenide; MMICs; Operational amplifiers; PHEMTs; Power amplifiers; Power generation; Power supplies; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2005 IEEE Conference on

Print_ISBN

0-7803-9339-2

Type

conf

DOI

10.1109/EDSSC.2005.1635243

Filename

1635243