Title :
dc-Electric-field-induced and Low-frequency Electromodulation Second-harmonic Generation Spectroscope
Author :
Fedyanin, Andrey A. ; Melnikov, A.V. ; Mishina, E.D. ; Rubtsov, A.N. ; Aktsipetrov, O.A. ; Anderson, M.H. ; Wilson, P.T. ; ter Beek, M. ; Hu, X.F. ; Dadap, Jerry I. ; Downer, M.C.
Author_Institution :
Dept. of Phys., Moscow State Univ., Russia
Abstract :
Summary form given. The second-harmonic generation (SHG) has been one of the most intensively studied phenomena in surface and interface optics for the last decade due to its unique sensitivity to the structural and electronic properties of surfaces and interfaces of centrosymmetric media. A dc electric field breaks the inversion symmetry of the centrosymmetric semiconductor in the space-charge region (SCR) and induces the bulk dipole nonlinear polarization at the SHG frequency, which is governed by the cubic susceptibility.
Keywords :
electro-optical effects; interface phenomena; optical harmonic generation; silicon; silicon compounds; spectroscopy; DC-electric-field-induced; EFISH phenomenon; EFISH spectroscopy; SHG intensity; Si(00l) face; Si-SiO/sub 2/; azimuthal anisotropy; dc-electric-field-induced SHG; direct two-photon transition; field-induced contribution; low-frequency electro modulation second-harmonic generation spectroscopy; quadratic polarization; rotationally isotropic interfacial SHG response; Crystallization; Electron optics; Electron traps; Ionization; Optical harmonic generation; Optical sensors; Optimized production technology; Spectroscopy; Temperature dependence;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680502
