Title :
A Fully Integrated SiGe Low Noise Amplifier for 3-5GHz Ultra-WideBand Radio
Author :
Li Yang ; Liao, Huailin ; Zhang, Guoyan ; Huang, Ru ; Zhang, Xing
Author_Institution :
Institute of Micro-Electronics, Peking University, Beijing, 100871, P.R. China, E-mail: Yang1@ime.pku.edu.cn
Abstract :
A fully integrated low-frequency band (3.1-5 GHz) UWB LNA was designed and implemented with Jazz 0.35μm SiGe BiCMOS (peak fT60 GHz) process. The measured maximum power gain is 15.7 dB at 3.5 GHz with 0.6dB gain flatness over the whole operating bandwidth. And the minimum noise figure 3.8 dB is achieved at 4GHz. The whole circuit including the bias circuit network consumes 7mA with 3V supply and only occupies 0.65 mm x 0.9mm.
Keywords :
LNA; NF; SiGe; UWB; power gain; Bandwidth; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; Integrated circuit measurements; Low-frequency noise; Low-noise amplifiers; Power measurement; Silicon germanium; Ultra wideband technology; LNA; NF; SiGe; UWB; power gain;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635250
