• DocumentCode
    1987211
  • Title

    A Fully Integrated SiGe Low Noise Amplifier for 3-5GHz Ultra-WideBand Radio

  • Author

    Li Yang ; Liao, Huailin ; Zhang, Guoyan ; Huang, Ru ; Zhang, Xing

  • Author_Institution
    Institute of Micro-Electronics, Peking University, Beijing, 100871, P.R. China, E-mail: Yang1@ime.pku.edu.cn
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    A fully integrated low-frequency band (3.1-5 GHz) UWB LNA was designed and implemented with Jazz 0.35μm SiGe BiCMOS (peak fT60 GHz) process. The measured maximum power gain is 15.7 dB at 3.5 GHz with 0.6dB gain flatness over the whole operating bandwidth. And the minimum noise figure 3.8 dB is achieved at 4GHz. The whole circuit including the bias circuit network consumes 7mA with 3V supply and only occupies 0.65 mm x 0.9mm.
  • Keywords
    LNA; NF; SiGe; UWB; power gain; Bandwidth; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; Integrated circuit measurements; Low-frequency noise; Low-noise amplifiers; Power measurement; Silicon germanium; Ultra wideband technology; LNA; NF; SiGe; UWB; power gain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635250
  • Filename
    1635250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1987211