DocumentCode :
1987254
Title :
Device Simulation in Nanoelectronic Era
Author :
Yu, Zhiping
Author_Institution :
Dept. Microelectronics and Nanoelectronics, Tsinghua University, Beijing 100084, China. yuzhip@tsinghua.edu.cn
fYear :
2005
fDate :
19-21 Dec. 2005
Firstpage :
243
Lastpage :
246
Abstract :
Progress in combining bandstructure calculation and solid-state device simulation is reviewed. Even though the underlying physics in nano-scaled devices has been shifted from classical to quantum mechanisms. the purpose of electronic devices remains the same: to provide switch and amplification for electrical signals. Key features in the next generation of device simulators serving both microelectronics and nanoelectronics are projected.
Keywords :
bandstructure; device simulation; nlanoelectroinc devices; quantum transport; Electrons; Equations; Microelectronics; Nanoscale devices; Nanowires; Photonic band gap; Physics; Silicon; Solid state circuits; Switches; bandstructure; device simulation; nlanoelectroinc devices; quantum transport;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
Type :
conf
DOI :
10.1109/EDSSC.2005.1635252
Filename :
1635252
Link To Document :
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