Title :
Device Simulation in Nanoelectronic Era
Author_Institution :
Dept. Microelectronics and Nanoelectronics, Tsinghua University, Beijing 100084, China. yuzhip@tsinghua.edu.cn
Abstract :
Progress in combining bandstructure calculation and solid-state device simulation is reviewed. Even though the underlying physics in nano-scaled devices has been shifted from classical to quantum mechanisms. the purpose of electronic devices remains the same: to provide switch and amplification for electrical signals. Key features in the next generation of device simulators serving both microelectronics and nanoelectronics are projected.
Keywords :
bandstructure; device simulation; nlanoelectroinc devices; quantum transport; Electrons; Equations; Microelectronics; Nanoscale devices; Nanowires; Photonic band gap; Physics; Silicon; Solid state circuits; Switches; bandstructure; device simulation; nlanoelectroinc devices; quantum transport;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635252