Title :
A 2-D Threshold-Voltage Model for Small MOSFET with Quantum-Mechanical Effects
Author :
Xu, J.P. ; Li, Y.P. ; Lai, P.T. ; Chen, W.B. ; Xu, S.G.
Author_Institution :
Department of Electronic Science and Technology, Huazhong University of Science and Technology
Abstract :
A threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data.
Keywords :
CMOS integrated circuits; CMOS technology; Dielectric substrates; Doping; MOSFET circuits; Quantization; Semiconductor device modeling; Semiconductor process modeling; Surface fitting; Threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635254
