DocumentCode :
1987293
Title :
Research in the Simulation Model of IGBT Package
Author :
Peng Zhang ; Ronggang Han ; Rui Jin ; Kunshan Yu ; Jun Liu ; Hailong Bao ; Yu Zhang ; Jiajie Che
Author_Institution :
State Grid Smart Grid Res. Inst., Beijing, China
Volume :
1
fYear :
2013
fDate :
28-29 Oct. 2013
Firstpage :
422
Lastpage :
425
Abstract :
Simulation technology provides a powerful tool for the IGBT module design. The IGBT chip model and the interconnect parasitics are the most important factors for the package design of IGBT module. By the aid of the simulation software, the IGBT chip model is fulfilled and the package parasitics is extracted. So the whole simulation deign platform of IGBT package achieves.
Keywords :
electronic engineering computing; insulated gate bipolar transistors; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; IGBT chip module package design; IGBT package simulation model; insulated gate bipolar transistors; interconnect parasitics; package parasitics; simulation software; Capacitance; Computational modeling; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Parameter extraction; Switches; IGBTchip; package; parameter extraction; parasitics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Intelligence and Design (ISCID), 2013 Sixth International Symposium on
Conference_Location :
Hangzhou
Type :
conf
DOI :
10.1109/ISCID.2013.111
Filename :
6805024
Link To Document :
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