Title :
Optical properties of green light-emitting diodes grown on r-plane sapphire substrates
Author :
Seo, Yong Gon ; Baik, Kwang Hyeon ; Song, Hoo-Young ; Son, Ji-Su ; Kim, Jihoon ; Oh, Kyunghwan ; Hwang, Sung-Min
Author_Institution :
Korea Electron. Technol. Inst., Sungnam, South Korea
fDate :
Aug. 28 2011-Sept. 1 2011
Abstract :
Nonpolar a-plane light emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapour deposition (MOCVD) on r-plane sapphire substrates. An optical output power of 0.26 mW was obtained at a drive current of 20 mA and 1.27 mW at 100 mA, with peak emission wavelengths of 504.5 nm and 503.9 nm, respectively. The peak emission wavelength shift for the green LED was 4.4 nm when the injection current was changed from 5 to 100 mA.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical properties; sapphire; wide band gap semiconductors; Al2O3; InGaN-GaN; drive current; metal organic chemical vapour deposition; multiple quantum well structures; nonpolar a-plane light emitting diodes; optical properties; power 0.26 mW; r-plane sapphire substrates; Current measurement; Gallium nitride; Green products; Light emitting diodes; Power generation; Stimulated emission; Substrates;
Conference_Titel :
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4577-1939-4
DOI :
10.1109/IQEC-CLEO.2011.6193816
