Accurate drain conductance modeling for distortion analysis in MOSFETs

Author

van Langevelde, R. ; Klaassen, F.M.

Author_Institution

Electron. Devices Group, Eindhoven Univ. of Technol., Netherlands

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

313

Lastpage

316

Abstract

Present compact circuit-level MOSFET models fail to accurately describe distortion effects, which is partly due to an imprecise modeling of conductance. A new MOS model has been developed which gives accurate results for distortion analysis, and incorporates a more precise description of various physical phenomena such as velocity saturation, channel length modulation, static feedback and self-heating.

Keywords

MOSFET; harmonic distortion; semiconductor device models; MOSFET; channel length modulation; distortion analysis; drain conductance model; self-heating; static feedback; velocity saturation; Circuits; Current measurement; Degradation; Feedback; Frequency measurement; Harmonic distortion; Length measurement; MOSFETs; Power harmonic filters; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650389

Filename

650389

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1987317