• DocumentCode
    1987444
  • Title

    An Improved Charge Pump and Its Application in Hot Swap Controller

  • Author

    Xiaobo, Wu ; Menglian, Zhao ; Xiaoru, Gao ; Xiaolong, Yan ; Yan Xiaolang

  • Author_Institution
    Institute of VLSI Design, Zhej iang University, Hangzhou, China. E-mail: wuxb@vlsi.ziu.Cedu.cn
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    281
  • Lastpage
    284
  • Abstract
    To prevent charge pump from degradation in its applications to power management IC (integrate circuit) like hot swap controller, the influence of the clock frequency and duty cycle on charge pump was analyzed. And a new oscillator structure featuring the immunity from changes of frequency and duty cycle, which is originated from the supply voltage fluctuation, was proposed. The new charge pump was applied to a hot swap controller IC to lift up the gate drive voltage of the external FET. Simulation results showed that by using it, the hot swap controller worked well while supply voltage swung from 3V to 10V. And all circuits were designed and realized in 1.5μm BCD (Bipolar-CMOS-DMOS) process.
  • Keywords
    Application specific integrated circuits; Charge pumps; Clocks; Degradation; Energy management; FET integrated circuits; Frequency; Voltage control; Voltage fluctuations; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635262
  • Filename
    1635262