DocumentCode :
1987460
Title :
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices
Author :
Torrente, Giulio ; Castellani, N. ; Ghetti, Andrea ; Compagnoni, C. Monzio ; Lacaita, Andrea L. ; Spinelli, Alessandro S. ; Benvenuti, A.
Author_Institution :
Dipt. di Elettron., Inf. e Bioingegneria, Politec. di Milano, Milan, Italy
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
21
Lastpage :
24
Abstract :
This work investigates the performance of the statistical impedance field method in the analysis of the amplitude of random telegraph noise fluctuations in nanoscale MOS devices. Considering different channel doping profiles, we show that this method offers a practical compromise between accuracy and computational loads, allowing a good assessment of the RTN amplitude statistics while resulting in non-negligible errors on the single microscopic samples where atomistic doping strongly contributes to non-uniformities of channel inversion and to percolative source-to-drain conduction.
Keywords :
MOSFET; doping profiles; nanoelectronics; random noise; RTN amplitude; atomistic doping; channel doping profiles; channel inversion; nanoscale MOS devices; random telegraph noise fluctuations; source-to-drain conduction; statistical impedance field method; Doping; Impedance; MOS devices; Microscopy; Nanoscale devices; Noise; Probability; Flash memories; MOSFETs; random telegraph noise; semiconductor device modeling; statistical impedance field method;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650564
Filename :
6650564
Link To Document :
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