DocumentCode :
1987516
Title :
Donor deactivation at high doping limit: Donor pair and impurity band model
Author :
Chihak Ahn ; Woosung Choi ; Schmidt, A. ; Keunho Lee ; Youngkwan Park ; Kubotera, Hiroyuki ; Kayama, Yasuyuki ; Cowern, N.E.B.
Author_Institution :
Device Lab., Samsung Semicond. Inc., San Jose, CA, USA
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
37
Lastpage :
40
Abstract :
We present a donor deactivation model at high doping limit. The limitation of the existing activation model is discussed and a solution is proposed. In the new model, the impurity band model is combined with ab-initio based lattice Monte Carlo (LMC) simulation to explain the saturation behavior of active donor concentration experimentally observed. The developed impurity band model can reproduce the activation level correctly and improves our understanding of charge carrier distribution in the impurity band. It also provides a new aspect of the behavior of the Fermi level (EF) at high doping limit. As a result, incorporating the new models into the existing diffusion and activation model improves the predictability of donor activation level.
Keywords :
Fermi level; Monte Carlo methods; ab initio calculations; band theory; diffusion; doping; impurities; Fermi level; ab-initio based lattice Monte Carlo simulation; active donor concentration; charge carrier distribution; diffusion; donor activation level; donor deactivation model; donor pair; high doping limit; impurity band model; saturation behavior; Chemicals; Doping; Energy states; Impurities; Semiconductor device modeling; Semiconductor process modeling; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650568
Filename :
6650568
Link To Document :
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