Title :
A Simple Model for Channel Noise of Deep Submicron MOSFETs
Author :
Lu, Z.Q. ; Ye, Y.Z.
Author_Institution :
Microelectronic Center, Harbin Institute of Technology, Harbin, HeiLongJiang, P. R. China. E-mail: soc@hit.edu.cn
Abstract :
A simple analytical model of MOSFETs channel noise is presented by considering short-channel effect of deep submicron MOSFETs, such as mobility degradation, channel length modulation. The model is explicit functions of MOSFETs geometry and biasing conditions, and hence is useful for circuit design purposes. Simulating results derived by using different channel noise model are compared and discussed.
Keywords :
Circuit noise; Geometry; Integrated circuit modeling; Integrated circuit noise; MOSFETs; Noise generators; Radio frequency; Radiofrequency integrated circuits; Solid modeling; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635269
