DocumentCode
1987559
Title
A Simple Model for Channel Noise of Deep Submicron MOSFETs
Author
Lu, Z.Q. ; Ye, Y.Z.
Author_Institution
Microelectronic Center, Harbin Institute of Technology, Harbin, HeiLongJiang, P. R. China. E-mail: soc@hit.edu.cn
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
309
Lastpage
312
Abstract
A simple analytical model of MOSFETs channel noise is presented by considering short-channel effect of deep submicron MOSFETs, such as mobility degradation, channel length modulation. The model is explicit functions of MOSFETs geometry and biasing conditions, and hence is useful for circuit design purposes. Simulating results derived by using different channel noise model are compared and discussed.
Keywords
Circuit noise; Geometry; Integrated circuit modeling; Integrated circuit noise; MOSFETs; Noise generators; Radio frequency; Radiofrequency integrated circuits; Solid modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635269
Filename
1635269
Link To Document