Title :
RF Model of Lateral Bipolar Junction Transistor on Silicon-on-Insulator Substrate
Author :
Lee, Dora ; Sun, I-Shan Michael ; Ng, Wai Tung
Author_Institution :
Department of Electrical and Computer Engineering, University of Toronto, 10 King´´s College Road, Toronto, ON, Canada, M5S 3G4. Email: dora.lee@utoronto.ca
Abstract :
A methodology for modelling a novel highfrequency lateral bipolar junction transistor (LBJT) is described. A modified SPICE-Gummel-Poon (SGP) model is used to simulate the device, with the SGP parameters determined based on the transistor´s physical geometry. DC, AC, and S-parameter simulations using this model are verified against measured data. The results show good matching and demonstrates that the novel geometry of the LBJT facilitates modelling by reducing the influence of second order effects.
Keywords :
Bipolar transistors; CMOS technology; Geometry; Integrated circuit technology; Isolation technology; Radio frequency; Semiconductor device modeling; Silicon on insulator technology; Solid modeling; Sun;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635270
