Title :
Compact modeling for the changing transistor
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
Compact model is not only a tool for IC design but also the unique bridge between IC manufacturing and design. It needs not only a mathematical model of a prototype transistor but also accurate models of many real device effects of the modern transistor. Compact model can address not only circuit performance but also reliability. BSIM and BERT are used as examples.
Keywords :
insulated gate field effect transistors; integrated circuit design; integrated circuit manufacture; semiconductor device models; semiconductor device reliability; BERT; BSIM; Berkeley short-channel IGFET model; changing transistor; compact modeling; integrated circuit design; integrated circuit manufacturing; integrated circuit reliability; Integrated circuit modeling; Logic gates; Mathematical model; Reliability; Semiconductor device modeling; Solid modeling; Transistors; FinFET; MOSFET; SPICE; compact model; reliability;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650571
