Title :
Parasitic Minimization in RF Multi-Fin FETs
Author :
Wu, Wen ; Zhang, Zhikuan ; Chan, Mansun
Author_Institution :
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong, E-mail: eewuwen@ust.hk
Abstract :
This paper studies the minimization of parasitics in multi-fin MOS devices. A distributed RC model is provided to minimize the gate resistances and the influence of device geometrical parameters on gate RC delay is thoroughly investigated. Also, we give a criterion to achieve the minimal gate resistance for RF device design. Furthermore, methods of reducing source/drain parasitic resistances and capacitances are discussed.
Keywords :
Contacts; Delay; FETs; FinFETs; Immune system; MOS devices; MOSFETs; Parasitic capacitance; Radio frequency; Roentgenium;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635272
