Recent enhancements in BSIM6 bulk MOSFET model

Author

Agarwal, Harshit ; Venugopalan, Sarad ; Chalkiadaki, Maria-Anna ; Paydavosi, Navid ; Duarte, Juan Pablo ; Agnihotri, Shantanu ; Yadav, Chandresh ; Kushwaha, Pragya ; Chauhan, Yogesh Singh ; Enz, C.C. ; Niknejad, A. ; Hu, Chuanmin

Author_Institution

Indian Inst. of Technol. Kanpur, Kanpur, India

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

53

Lastpage

56

Abstract

In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is infinitely continuous around V_bs=V_bd=0V. Symmetry of the model is successfully validated by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC. Self heating model is also included in BSIM6 and test results are reported. Model capabilities are compared against an advanced 40nm CMOS technology and it is observed that simulated results are in excellent agreement with the measured data.

Keywords

CMOS integrated circuits; MOSFET; semiconductor device models; semiconductor device testing; BSIM6 bulk MOSFET model; CMOS technology; GST; body referenced charge based core; gummel symmetry test; junction capacitance model; self heating model; size 40 nm; Biological system modeling; Capacitance; Integrated circuit modeling; Junctions; Logic gates; MOSFET; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650572

Filename

6650572