DocumentCode
1987657
Title
Compact modeling for application-specific high-sigma worst case
Author
Hsuan-Han Wang ; Yi-Ling Chen ; Chang-Chieh Yang ; Chung-Kai Lin ; Min-Chie Jeng
Author_Institution
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
61
Lastpage
64
Abstract
A high-sigma corner model derived from Monte Carlo simulation with a novel sampling algorithm is presented. Compared with the traditional Monte Carlo simulation approach, the simulation effort and computational resource is greatly reduced. This methodology can be applied to create application-specific corner model for different design spec leading to more competitive designs.
Keywords
Monte Carlo methods; SRAM chips; application specific integrated circuits; integrated circuit modelling; Monte Carlo simulation; application-specific high-sigma worst case model; compact modeling; computational resource; sampling algorithm; Integrated circuit modeling; Monte Carlo methods; Predictive models; SRAM cells; Semiconductor process modeling; Solid modeling; Monte Carlo simulation; SRAM simulation; compact model; high sigma; statistical model; worst case model;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650574
Filename
6650574
Link To Document