• DocumentCode
    1987681
  • Title

    Stress estimation in open tungsten TSV

  • Author

    Singulani, A.P. ; Ceric, H. ; Selberherr, Siegfried

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2013
  • fDate
    3-5 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have studied the residual stress formation in the metal film of a Through Silicon Via (TSV) technology. The film is deposited by a CVD process in the TSV´s wall and a residual stress arises due to this process. Our goal was to develop a methodology to estimate the stress based on growth parameters. The calculation results exhibit a good agreement with experiments, although there is a tendency for stress underestimation.
  • Keywords
    chemical vapour deposition; internal stresses; semiconductor growth; stress analysis; three-dimensional integrated circuits; CVD process; TSV; growth parameters; metal film; open tungsten; residual stress formation; stress estimation; stress underestimation; through silicon via technology; Films; Metals; Residual stresses; Silicon; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
  • Conference_Location
    Glasgow
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-5733-3
  • Type

    conf

  • DOI
    10.1109/SISPAD.2013.6650575
  • Filename
    6650575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1987681