DocumentCode
1987689
Title
Limits of specific contact resistivity to Si, Ge and III-V semiconductors using interfacial layers
Author
Shine, Gautam ; Saraswat, Krishna C.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
69
Lastpage
72
Abstract
Specific contact resistivities of source/drain contacts employing interfacial layers are calculated with simulations of tunneling transport. Fermi level depinning, dipoles, and other techniques for barrier lowering are explored. Interfacial materials with the potential to meet future contact resistivity requirements are identified for silicon and high-mobility alternatives.
Keywords
Fermi level; III-V semiconductors; contact resistance; elemental semiconductors; germanium; silicon; tunnelling; Fermi level depinning; Ge; III-V semiconductors; Si; dipoles; interfacial layers; source/drain contacts; specific contact resistivity; tunneling transport; Doping; Resistance; Schottky barriers; Silicon; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650576
Filename
6650576
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