Impact of intermetallic compound on solder bump electromigration reliability

Author

Ceric, H. ; Singulani, A.P. ; de Orio, R.L. ; Selberherr, Siegfried

Author_Institution

Christian Doppler Lab. for Reliability Issues in Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

73

Lastpage

76

Abstract

Solder bumps are important interconnect components for 3D integration. Their mechanical and electrical properties influence the overall reliability of 3D ICs. A characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation influences the operation of 3D ICs and, in connection with electro-migration, may cause failures in ICs. In this paper we present a model for describing the growth of intermetallic compound inside a solder bump under the influence of electromigration. Simulation results based on the new model are discussed in conjunction with corresponding experimental findings.

Keywords

electromigration; integrated circuit interconnections; integrated circuit reliability; solders; three-dimensional integrated circuits; 3D integrated circuits; 3D integration; interconnect components; intermetallic compound growth; material composition; solder bump electromigration reliability; Chemicals; Electromigration; Nickel; Reliability; Resistance; Three-dimensional displays; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650577

Filename

6650577