DocumentCode :
1987718
Title :
Impact of intermetallic compound on solder bump electromigration reliability
Author :
Ceric, H. ; Singulani, A.P. ; de Orio, R.L. ; Selberherr, Siegfried
Author_Institution :
Christian Doppler Lab. for Reliability Issues in Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
73
Lastpage :
76
Abstract :
Solder bumps are important interconnect components for 3D integration. Their mechanical and electrical properties influence the overall reliability of 3D ICs. A characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation influences the operation of 3D ICs and, in connection with electro-migration, may cause failures in ICs. In this paper we present a model for describing the growth of intermetallic compound inside a solder bump under the influence of electromigration. Simulation results based on the new model are discussed in conjunction with corresponding experimental findings.
Keywords :
electromigration; integrated circuit interconnections; integrated circuit reliability; solders; three-dimensional integrated circuits; 3D integrated circuits; 3D integration; interconnect components; intermetallic compound growth; material composition; solder bump electromigration reliability; Chemicals; Electromigration; Nickel; Reliability; Resistance; Three-dimensional displays; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650577
Filename :
6650577
Link To Document :
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