Electrostatics and ballistic transport studies in junctionless nanowire transistors

In this work a drift-diffusion simulator is utilized to study the electrostatics of a cylindrical gate-all-around junctionless nanowire transistor. For carrier transport properties such as carrier scattering and velocity in channel, a full band Monte Carlo is adopted to simulate non-equilibrium and ballistic behaviors. Two major cases: different S/D extension schemes and channel doping effects are examined in this study. It is observed that S/D extension underlap can benefit short-channel control and carrier velocity. In addition, channel doping is found to play an import role to increase carrier injection velocity in the junctionless nanowire transistors.