DocumentCode :
1987801
Title :
Strain effects on transport properties of Si nanowire devices
Author :
Viet-Hung Nguyen ; Triozon, Francois ; Niquet, Yann-Michel
Author_Institution :
INAC, UJF-Grenoble 1, Grenoble, France
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
89
Lastpage :
92
Abstract :
We study the effects of strains on the performances of (001) and (110) oriented gate-all-around silicon nanowire (Si NW) transistors within a Non-Equilibrium Green´s Functions framework. In agreement with previous works, we show that uniaxial strains can significantly improve the carrier mobility in the channel. However, we find that besides the enhancement of the carrier mobility, the ballistic resistance must be simultaneously optimized to achieve good performances in short channel devices. The response of the ballistic resistance to strains is different in [001] and [110] strained devices. Our study shows that the ballistic resistance is improved more consistently with the mobility in [110] Si NWs, providing the best opportunities for strain engineering in ultimate short channel transistors.
Keywords :
Green´s function methods; ballistic transport; carrier mobility; elemental semiconductors; nanowires; silicon; transistors; NW; Si; ballistic resistance; carrier mobility; channel carrier mobility; nonequilibrium Green´s functions framework; oriented gate-all-around nanowire transistor; short channel transistor device; strain engineering effect; strained device; transport property; Charge carrier processes; Logic gates; Nanoscale devices; Performance evaluation; Resistance; Silicon; Strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650581
Filename :
6650581
Link To Document :
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