Characterization of low-dislocation synthetic quartz grown on highly distorted seed by X-ray topography

In the present study, the feasibility to grow a dislocation-free synthetic quartz with large Z-region from a seed containing high density of dislocation is reported. For such purpose, a seed with new geometric design was prepared. A seed long in Y-direction and containing V-shaped cuts with cutting angle of 90° made on Z-face {0001} was prepared and grown in the hydrothermal process. As a result, new growth regions usually not found in the conventional Y- and Z-bars synthetic quartz crystals have been imaged by the X-ray topography. The new growth region grown from the V-shaped cut was composed with two sub-regions of distinct textures. Due to their high growth velocity perpendicularly to cut faces, they disappeared and were replaced by the so-called Z-region. However these newly grown sub-regions played an important role to change the direction of dislocation propagation present in the seed trapping them and minimizing their propagation into the grown Z-region