DocumentCode
1987858
Title
High voltage diffusion along Z- and X-axes on quartz crystal
Author
Smaali, M. ; Boy, J.J. ; Briot, J.B.
Author_Institution
ENSMM/LCEP, Besancon, France
Volume
2
fYear
1999
fDate
1999
Firstpage
769
Abstract
Quartz resonator quality is improved using sweeping treatment. It is well known that this operation is usually performed by applying a high electric field along the optical axis (Z) of the quartz lattice. This is due to the existence of channels formed by helicoidal structure of quartz crystal. This crystallographic structure exhibits other channels parallel to the electrical axis (X) which are larger than the previous ones. In order to compare the influence of each kind of sweeping on the quality of quartz resonator, we have performed Z- and X-sweeping on natural and cultured quartz bars used to manufacture 10 MHz SC-cut resonators. As usually, the process of qualification has been achieved by comparisons between spectrometric measurements (infrared, laser absorption, ICP) before and after treatments
Keywords
crystal resonators; diffusion; quartz; 10 MHz; ICP spectrometry; SC-cut resonator; SiO2; X-axis; Z-axis; crystallographic structure; electric field; high voltage diffusion; infrared spectrometry; laser absorption spectrometry; optical axis; quartz crystal; sweeping treatment; Bars; Crystallography; Electromagnetic wave absorption; Infrared spectra; Lattices; Manufacturing; Optical resonators; Qualifications; Spectroscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency and Time Forum, 1999 and the IEEE International Frequency Control Symposium, 1999., Proceedings of the 1999 Joint Meeting of the European
Conference_Location
Besancon
ISSN
1075-6787
Print_ISBN
0-7803-5400-1
Type
conf
DOI
10.1109/FREQ.1999.841418
Filename
841418
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