• DocumentCode
    1987858
  • Title

    High voltage diffusion along Z- and X-axes on quartz crystal

  • Author

    Smaali, M. ; Boy, J.J. ; Briot, J.B.

  • Author_Institution
    ENSMM/LCEP, Besancon, France
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    769
  • Abstract
    Quartz resonator quality is improved using sweeping treatment. It is well known that this operation is usually performed by applying a high electric field along the optical axis (Z) of the quartz lattice. This is due to the existence of channels formed by helicoidal structure of quartz crystal. This crystallographic structure exhibits other channels parallel to the electrical axis (X) which are larger than the previous ones. In order to compare the influence of each kind of sweeping on the quality of quartz resonator, we have performed Z- and X-sweeping on natural and cultured quartz bars used to manufacture 10 MHz SC-cut resonators. As usually, the process of qualification has been achieved by comparisons between spectrometric measurements (infrared, laser absorption, ICP) before and after treatments
  • Keywords
    crystal resonators; diffusion; quartz; 10 MHz; ICP spectrometry; SC-cut resonator; SiO2; X-axis; Z-axis; crystallographic structure; electric field; high voltage diffusion; infrared spectrometry; laser absorption spectrometry; optical axis; quartz crystal; sweeping treatment; Bars; Crystallography; Electromagnetic wave absorption; Infrared spectra; Lattices; Manufacturing; Optical resonators; Qualifications; Spectroscopy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency and Time Forum, 1999 and the IEEE International Frequency Control Symposium, 1999., Proceedings of the 1999 Joint Meeting of the European
  • Conference_Location
    Besancon
  • ISSN
    1075-6787
  • Print_ISBN
    0-7803-5400-1
  • Type

    conf

  • DOI
    10.1109/FREQ.1999.841418
  • Filename
    841418