DocumentCode :
1987858
Title :
High voltage diffusion along Z- and X-axes on quartz crystal
Author :
Smaali, M. ; Boy, J.J. ; Briot, J.B.
Author_Institution :
ENSMM/LCEP, Besancon, France
Volume :
2
fYear :
1999
fDate :
1999
Firstpage :
769
Abstract :
Quartz resonator quality is improved using sweeping treatment. It is well known that this operation is usually performed by applying a high electric field along the optical axis (Z) of the quartz lattice. This is due to the existence of channels formed by helicoidal structure of quartz crystal. This crystallographic structure exhibits other channels parallel to the electrical axis (X) which are larger than the previous ones. In order to compare the influence of each kind of sweeping on the quality of quartz resonator, we have performed Z- and X-sweeping on natural and cultured quartz bars used to manufacture 10 MHz SC-cut resonators. As usually, the process of qualification has been achieved by comparisons between spectrometric measurements (infrared, laser absorption, ICP) before and after treatments
Keywords :
crystal resonators; diffusion; quartz; 10 MHz; ICP spectrometry; SC-cut resonator; SiO2; X-axis; Z-axis; crystallographic structure; electric field; high voltage diffusion; infrared spectrometry; laser absorption spectrometry; optical axis; quartz crystal; sweeping treatment; Bars; Crystallography; Electromagnetic wave absorption; Infrared spectra; Lattices; Manufacturing; Optical resonators; Qualifications; Spectroscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency and Time Forum, 1999 and the IEEE International Frequency Control Symposium, 1999., Proceedings of the 1999 Joint Meeting of the European
Conference_Location :
Besancon
ISSN :
1075-6787
Print_ISBN :
0-7803-5400-1
Type :
conf
DOI :
10.1109/FREQ.1999.841418
Filename :
841418
Link To Document :
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