Title :
Mechanism of super steep subthreshold slope characteristics with body-tied SOI MOSFET
Author :
Mori, Takayoshi ; Ida, Jiro
Author_Institution :
Div. of Electr. Eng., Kanazawa Inst. of Technol., Nonoichi, Japan
Abstract :
Super steep subthreshold slope characteristics in the FB and the BT are investigated with TCAD. The mechanism of the enhanced DIBL and the addition of the positive feedback PBT action by the forward biased emitter-base voltage are proposed to explain the difference between the FB and the BT.
Keywords :
MOSFET; silicon-on-insulator; DIBL; TCAD; body-tied SOI MOSFET; forward biased emitter-base voltage; positive feedback PBT action; super steep subthreshold slope characteristics; Current measurement; Electric potential; Impact ionization; Logic gates; MOSFET; Voltage measurement; Body-Tied; Floating-Body; Parasitic Bipolar Transistor; SOI MOSFET; steep subthreshold slope;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650584
