Title :
A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime
Author :
Bonani, F. ; Donati Guerrieri, S. ; Ghione, G. ; Pirola, M.
Author_Institution :
Dipt. di Elettronica, Politecnico di Torino, Italy
Abstract :
The paper presents a novel technique to evaluate the noise of semiconductor devices under large-signal, (quasi) periodic operation through the extension of the Impedance Field Method (IFM). A numerical implementation within the framework of a drift-diffusion model is discussed making use of the Harmonic Balance (HB) technique applied to the carrier and potential distributions, and the approach is validated through the noise analysis of a varactor diode RF frequency doubler.
Keywords :
frequency multipliers; semiconductor device models; semiconductor device noise; varactors; carrier distribution; harmonic balance technique; impedance field method; large signal quasi-periodic operation; noise analysis; nonlinear system; numerical drift-diffusion model; potential distribution; semiconductor device; varactor diode RF frequency doubler; Amplitude modulation; Circuit noise; Fluctuations; Frequency conversion; Linear systems; Microscopy; Noise figure; Semiconductor device noise; Semiconductor devices; Signal analysis;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650392
