A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime

Author

Bonani, F. ; Donati Guerrieri, S. ; Ghione, G. ; Pirola, M.

Author_Institution

Dipt. di Elettronica, Politecnico di Torino, Italy

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

321

Lastpage

324

Abstract

The paper presents a novel technique to evaluate the noise of semiconductor devices under large-signal, (quasi) periodic operation through the extension of the Impedance Field Method (IFM). A numerical implementation within the framework of a drift-diffusion model is discussed making use of the Harmonic Balance (HB) technique applied to the carrier and potential distributions, and the approach is validated through the noise analysis of a varactor diode RF frequency doubler.

Keywords

frequency multipliers; semiconductor device models; semiconductor device noise; varactors; carrier distribution; harmonic balance technique; impedance field method; large signal quasi-periodic operation; noise analysis; nonlinear system; numerical drift-diffusion model; potential distribution; semiconductor device; varactor diode RF frequency doubler; Amplitude modulation; Circuit noise; Fluctuations; Frequency conversion; Linear systems; Microscopy; Noise figure; Semiconductor device noise; Semiconductor devices; Signal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650392

Filename

650392