Title :
Fin bending due to stress and its simulation
Author :
Gencer, Alp H. ; Tsamados, Dimitrios ; Moroz, Victor
Author_Institution :
Synopsys, Inc., Mountain View, CA, USA
Abstract :
Modern CMOS and memory devices feature fins, which are high aspect ratio elements. While narrow and tall fins enhance electrical characteristics, they are mechanically weak structures. Unexpected failure mechanisms, such as fin bending and even cracking can arise in such devices. This paper discusses such mechanisms and offers a methodology to simulate them.
Keywords :
CMOS integrated circuits; MOSFET; bending; cracks; failure (mechanical); semiconductor device models; CMOS devices; FinFET; cracking; failure mechanisms; fin bending; high aspect ratio elements; mechanical stress; memory devices; Analytical models; FinFETs; Mathematical model; Shape; Stress; Surfaces; Three-dimensional displays; Fin bending; FinFET; leaning; stress engineering;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650586
