• DocumentCode
    1987939
  • Title

    Understanding workfunction tuning in HKMG by Lanthanum diffusion combining simulations and measurements

  • Author

    Spessot, A. ; Caillat, Christian ; Fazan, P. ; Ritzenthaler, R. ; Schram, T.

  • Author_Institution
    Micron Technol. Belgium BVBA, Leuven, Belgium
  • fYear
    2013
  • fDate
    3-5 Sept. 2013
  • Firstpage
    113
  • Lastpage
    116
  • Abstract
    In this paper, we propose a method to extract effective diffusion coefficients for Lanthanum in HfO2 for an HKMG technology. TCAD diffusion simulations is combined to the analysis of theoretically expected Work Function shift due to Lanthanum at the HfO2/SiO2 interface and experimentally extracted Work Function value under various thermal budgets, obtaining a good agreement between simulations and experimental data.
  • Keywords
    hafnium compounds; lanthanum; technology CAD (electronics); HKMG technology; HfO2; La; TCAD diffusion simulations; extract effective diffusion coefficients; extracted work function value; lanthanum diffusion; thermal budgets; workfunction tuning; Hafnium compounds; High K dielectric materials; Lanthanum; Logic gates; Silicon; Standards; Diffusion; HKMG; Lanthanum; Work Function Gate Stack;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
  • Conference_Location
    Glasgow
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-5733-3
  • Type

    conf

  • DOI
    10.1109/SISPAD.2013.6650587
  • Filename
    6650587
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1987939