• DocumentCode
    1987949
  • Title

    Low Injection Base Current Model for SiGe HBT in E-B Depletion Region

  • Author

    Pant, Vivek ; Pandit, Viraj

  • Author_Institution
    PhD students at the Electrical and Computer Engineering Department, the University of Arizona, Tucson, AZ, USA. E-mail: vivek@email.arizona.edu
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    401
  • Lastpage
    404
  • Abstract
    Low injection profile of base current is of great importance while considering power-efficient system design. The base current in SiGe HBT at low VBEis higher than Si-BJT base current. This shows the adverse side of using the otherwise superior heterojunction SiGe-HBT over Si-BJT. This paper presents a physical model of low-injection base current and discusses the way this model can be used to estimate defect density in SiGe device.
  • Keywords
    Charge carrier processes; Electron emission; Germanium silicon alloys; Heterojunction bipolar transistors; Power system modeling; Semiconductor device modeling; Semiconductor process modeling; Silicon germanium; Spontaneous emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635291
  • Filename
    1635291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1987949