Title :
Low Injection Base Current Model for SiGe HBT in E-B Depletion Region
Author :
Pant, Vivek ; Pandit, Viraj
Author_Institution :
PhD students at the Electrical and Computer Engineering Department, the University of Arizona, Tucson, AZ, USA. E-mail: vivek@email.arizona.edu
Abstract :
Low injection profile of base current is of great importance while considering power-efficient system design. The base current in SiGe HBT at low VBEis higher than Si-BJT base current. This shows the adverse side of using the otherwise superior heterojunction SiGe-HBT over Si-BJT. This paper presents a physical model of low-injection base current and discusses the way this model can be used to estimate defect density in SiGe device.
Keywords :
Charge carrier processes; Electron emission; Germanium silicon alloys; Heterojunction bipolar transistors; Power system modeling; Semiconductor device modeling; Semiconductor process modeling; Silicon germanium; Spontaneous emission; Temperature;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635291
