Source/Drain Resistance of UTB SOI MOSFET

The source/drain (S/D) series resistance of the ultra-thin-body (UTB) SOI MOSFETs with an elevated S/D and undoped channel is studied. The dependence of the series resistance components on the geometry/process parameters is quantitatively investigated. It is shown that the S/D contact resistivity, extension length, and doping profile are the major factors determining the series resistance. It is also suggested that with scaling into sub-20 nm technology nodes, the elevated S/D structure should be very difficult to provide UTB device with the acceptable series resistance specified by the Technology Roadmap.